1N4448 High Speed Switching Diode Small Single Diode With DO-35 Case
Features
• Silicon Epitaxial Planar Diode
• Fast switching diode.
• This diode is also available in other case styles including the SOD-123 case with the type
designation 1N4448W, the MiniMELF case with the type designation LL4148, the SOT-23
case with the type designation IMBD4148.
.
Mechanical Data
Case: DO-35 Glass Case
Weight: approx. 0.13g
Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)
| Parameter | Symbol | Limit | Unit |
| Reverse Voltage | VR | 75 | V |
| Peak Reverse Voltage | VRM | 100 | V |
| Average Rectified Current Half Wave Rectification with Resistive Load at Tamb = 25°C | IF(AV) | 150 | mA |
| Surge Forward Current at t < 1s and Tj = 25°C | IFSM | 500 | mA |
| Power Dissipation at Tamb = 25°C | Ptot | 500 | mW |
| Thermal Resistance Junction to Ambient Air | RθJA | 350 | °C/W |
| Junction Temperature | Tj | 175 | °C |
| Storage Temperature | TS | –65 to +175 | °C |
Electrical Characteristics (TJ = 25°C unless otherwise noted)
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Forward Voltage | VF | IF = 5mA IF = 100mA | 0.62 — | — — | 0.70 1.0 | V |
| Leakage Current | IR | VR = 20V VR = 75V VR = 20V, TJ = 150°C | — — — | — — — | 25 5 50 | nA μA μA |
| Reverse Breakdown Voltage | V(BR)R | IR = 100ìA (pulsed) | 100 | — | — | V |
| Capacitance | Ctot | VF = VR = 0V | — | — | 4 | pF |
| Reverse Recovery Time | trr | IF = 10mA, IR = 1mA, VR = 6V , RL = 100Ù | — | — | 4 | ns |
| Rectification Efficiency | nv | f = 100MHz, VRF = 2V | 0.45 | — | — | — |
Drawing:
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Product Tags:
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General Purpose Small Signal Fast Switching Diodes 1N4448 With DO-35 Case Images
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